An ultra-wideband baseband front-end

A 900 MHz bandwidth front-end with a -100dB/decade roll-off for a baseband pulse-based BPSK ultra-wideband transceiver is designed and tested in 1.8 V 0.18 /spl mu/m CMOS. Trade-offs in noise figure (NF) and voltage gain within broadband power-matched and un-matched (voltage-boosted) conditions of the front-end are discussed. The front-end achieves 38 dB of gain and 10.2 dB of average NF in the power-matched case, and 42 dB of gain and 7.9 dB of average NF in the un-matched case. Theory and measurements of the matching techniques and microwave design parameters upon NF and UWB signal to sinusoidal interferer ratios are also presented.

[1]  Won Namgoong,et al.  Low noise amplifier design for ultra-wideband radio , 2003, Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03..

[2]  K. Aufinger,et al.  15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[3]  E. Klumperink,et al.  Noise cancelling in wideband CMOS LNAs , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

[4]  Christopher Bowick.  RF Circuit Design , 1982 .

[5]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .