4kV Silicon Carbide MOSFETs
暂无分享,去创建一个
Osama S. Saadeh | Charles R. Eddy | D. Kurt Gaskill | Ljubisa Dragoljub Stevanovic | Kevin Matocha | Rachael L. Myers-Ward | Peter Almern Losee | Alexander Viktorovich Bolotnikov | Stephen Daley Arthur | Zachary Stum | R. Ramakrishna Rao | Jeff Nasadoski
[1] B. Jayant Baliga,et al. Fundamentals of Power Semiconductor Devices , 2008 .
[2] R. Myers-Ward,et al. Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC , 2009 .
[3] J. Nasadoski,et al. DC and Transient Performance of 4H-SiC Double-Implant MOSFETs , 2008, IEEE Transactions on Electron Devices.