论文信息 - Impact of Multi-Layered Gate Design on Hot Carrier Reliability of Gate Electrode Workfunction Engineered Recessed Channel ( GEWE-RC ) MOSFET

Impact of Multi-Layered Gate Design on Hot Carrier Reliability of Gate Electrode Workfunction Engineered Recessed Channel ( GEWE-RC ) MOSFET

The paper discusses hot carrier reliability assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving channel recession and gate electrode workfunction engineering integration onto the conventional MOSFET, using ATLAS device simulator. Further, the impact of gate stack architecture on the device reliability of GEWE-RC MOSFET is studied in terms of hot carrier behavior. TCAD simulations reveal reduction in the hot carrier reliability metrics such as electron velocity, electron temperature, conduction band offset, hot electron injected gate current and impact ionization substrate current.

R. S. Gupta | Rishu Chaujar | Manoj Saxena | Mridula Gupta | Ravneet Kaur

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