Fatigue in sol-gel derived barium titanate films

The effect of fatigue on the electrical properties of sol-gel derived ferroelectric barium titanate (BaTiO3) thin films have been investigated. At room temperature, the resistivity, breakdown field, dielectric constant (e), and loss tangent (tan δ) decreases after fatigue while the coercive field increases. Fatigue also influences the dielectric properties of the film at high temperatures. The sharpness and magnitude of the peak in the dielectric constant at the transition temperature decreases after fatigue. The loss tangent of the virgin film showed a peak at the transition temperature while it is absent in the case of the fatigue film. The phenomena are explained in terms of (i) the accumulation of point charge defect, (ii) the pinning of domain wall mobility, and (iii) the space charge layer models of fatigue.

[1]  I. P. Batra,et al.  Depolarization effects in thin ferroelectric films , 1976 .

[2]  K. Iijima,et al.  Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation , 1990 .

[3]  R. Zuleeg,et al.  Quantitative measurement of space-charge effects in lead zirconate-titanate memories , 1991 .

[4]  James F. Scott,et al.  Fatigue and switching in ferroelectric memories: Theory and experiment , 1990 .

[5]  G. Samara.  Pressure and Temperature Dependences of the Dielectric Properties of the Perovskites BaTi O 3 and SrTi O 3 , 1966 .

[6]  R. Atkin.  Performance of Sputtered Pb0.92Bi0.07La0.01(Fe0.405Nb0.325Zr0.27)O3Ferroelectric Memory Films , 1972, IEEE Transactions on Sonics and Ultrasonics.

[7]  R. Vest,et al.  High K BaTiO/sub 3/ films from metalloorganic precursors , 1989, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[8]  M. Sayer,et al.  Structural and electrical properties of rf-sputtered amorphous barium titanate thin films , 1987 .

[9]  K. Carl.  Ferroelectric properties and fatiguing effects of modified PbTiO3 ceramics , 1975 .

[10]  S. Bernacki.  Polarization Dependent Conductivity in Thin Film Pzt Capacitors , 1991 .

[11]  S. B. Krupanidhi,et al.  Current-voltage characteristics of ultrafine-grained ferroelectric Pb(Zr, Ti)O_3 thin films , 1994 .

[12]  A. M. Glass,et al.  Principles and Applications of Ferroelectrics and Related Materials , 1977 .

[13]  R. Waser,et al.  Theory of conduction and breakdown in perovskite thin films , 1992 .

[14]  M. N. Kamalasanan,et al.  Structural and optical properties of sol-gel-processed BaTiO3 ferroelectric thin films , 1991 .

[15]  Naoya Uchida,et al.  Temperature and Bias Characteristics of Pb(Zr-Ti)O3 Families Ceramics , 1965 .

[16]  James F. Scott,et al.  Switching kinetics of lead zirconate titanate submicron thin‐film memories , 1988 .

[17]  S. B. Krupanidhi,et al.  Enhanced electrical properties of ferroelectric Pb(Zr0.5, Ti0.5)O3 thin films grown with low‐energy oxygen ion assistance , 1993 .

[18]  Jianhua Hu,et al.  Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition , 1992 .

[19]  M. J. E. Ulenaers,et al.  Preparation and ferroelectric properties of PbZr0.53Ti0.47O3 thin films by spin coating and metalorganic decomposition , 1991 .

[20]  W. R. Salaneck.  Some fatiguing effects in 8/65/35 plzt fine grained ferroelectric ceramic , 1972 .

[21]  S. B. Krupanidhi,et al.  Multi‐ion‐beam reactive sputter deposition of ferroelectric Pb(Zr,Ti)O3 thin films , 1992 .

[22]  D. M. Smyth.  Charge motion in ferroelectric thin films , 1991 .

[23]  P. J. van Veldhoven,et al.  Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model , 1994 .