Temperature-Compensated High-Frequency Surface Acoustic Wave Device

We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO3 thin film on SiO2/LiNbO3 substrate. SAW devices with a wavelength of 2 μm have been fabricated and several wave modes ranging from ~ 1.5 to 2.1 GHz have been obtained. With the SiO2 interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO3 piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.

[1]  H. Campanella,et al.  Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications , 2013, IEEE Electron Device Letters.

[2]  K. Hashimoto,et al.  Recent development of temperature compensated SAW Devices , 2011, 2011 IEEE International Ultrasonics Symposium.

[3]  R. Takayama,et al.  Study of Relationship between Layer Profile of SiO , 2011 .

[4]  Study of Relationship between Layer Profile of SiO2and Characteristics of Surface Acoustic Wave Devices in SiO2/Al/LiTaO3System , 2011 .

[5]  T. Ren,et al.  Surface acoustic wave characteristics based on c-axis (006) LiNbO3/diamond/silicon layered structure , 2011 .

[6]  K. Hashimoto,et al.  Miniature Surface Acoustic Wave Duplexer Using SiO2/Al/LiNbO3 Structure for Wide-Band Code-Division Multiple-Access System , 2008 .

[7]  F. Ndagijimana,et al.  Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies , 2008, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[8]  Wei Pang,et al.  Ultra Temperature-Stable Bulk-Acoustic-Wave Resonators with SiO 2 Compensation Layer , 2007, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[9]  K. Sreenivas,et al.  Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer , 2005 .

[10]  M. Shur,et al.  Leaky surface acoustic waves in Z-LiNbO3 substrates with epitaxial AIN overlays , 2004 .

[11]  Sylvain Ballandras,et al.  Scattering matrix method for modeling acoustic waves in piezoelectric, fluid, and metallic multilayers , 2003 .

[12]  K. Petersen.  Dynamic micromechanics on silicon: Techniques and devices , 1978, IEEE Transactions on Electron Devices.

[13]  F. S. Welsh,et al.  Temperature Dependence of the Elastic, Piezoelectric, and Dielectric Constants of Lithium Tantalate and Lithium Niobate , 1971 .