Electroreflectance of p-type GaAs

[1]  Y. Hamakawa,et al.  Anomalous electro-reflectance signals near the fundamental edge of zinc selenide , 1969 .

[2]  Y. Hamakawa,et al.  Low Temperature Electro-Reflectance Spectra of Germanium in Spectral Region from 0.7 to 2.6 eV , 1969 .

[3]  M. Cardona,et al.  New Evidence for the Existence of Exciton Effects at Hyperbolic Critical Points , 1968 .

[4]  D. E. Hill,et al.  Free-Carrier and Exciton Recombination Radiation in GaAs , 1968 .

[5]  E. W. Williams,et al.  Electroreflectance Studies of InAs, GaAs, and (Ga,In) As Alloys , 1968 .

[6]  J. C. Irvin,et al.  Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K , 1968 .

[7]  Yoshihiro Hamakawa,et al.  Interband Electro-Optical Properties of Germanium. II. Electroreflectance , 1968 .

[8]  Y. Hamakawa,et al.  Interband Electro-Optical Properties of Germanium. I. Electroabsorption , 1968 .

[9]  D. Aspnes,et al.  INTERBAND DIELECTRIC PROPERTIES OF SOLIDS IN AN ELECTRIC FIELD. , 1968 .

[10]  A. Ghosh.  Electroreflectance Spectra and Band Structure of Germanium , 1968 .

[11]  R. Enderlein.  Excitonic Effects in the Electro‐Absorption of Semiconductors , 1968 .

[12]  R. Enderlein,et al.  On the Dielectric Function of a Semiconductor in an External Electric Field , 1967, September 1.

[13]  F. Aymerich,et al.  Electric-field effects on interband transitions , 1967 .

[14]  David E. Aspnes,et al.  Electric Field Effects on the Dielectric Constant of Solids , 1967 .

[15]  E. W. Williams.  Photoluminescence of epitaxial n-type GaAs at 20°K , 1966 .

[16]  D. Aspnes.  Electric-Field Effects on Optical Absorption near Thresholds in Solids , 1966 .

[17]  A. G. Thompson,et al.  Electroreflectance in the GaAs-GaP Alloys , 1966 .

[18]  B. Seraphin,et al.  Band-Structure Analysis from Electro-Reflectance Studies , 1966 .

[19]  David E. Aspnes,et al.  Electro-Absorption Effects at the Band Edges of Silicon and Germanium , 1966 .

[20]  C. Duke,et al.  Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in Semiconductors , 1966 .

[21]  B. Seraphin.  Electroreflectance Studies in GaAs , 1966 .

[22]  Fred H. Pollak,et al.  Electroreflectance at a Semiconductor-Electrolyte Interface , 1965 .

[23]  B. Seraphin.  Optical Field Effect in Silicon , 1965 .

[24]  C. Duke.  Optical Absorption by Excitons in a Strong Electric Field , 1965 .

[25]  B. Seraphin,et al.  Field Effect of the Reflectivity in Germanium , 1965 .

[26]  M. Cardona.  Band parameters of semiconductors with zincblende, wurtzite, and germanium structure , 1963 .

[27]  M. Sturge.  Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .