IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF

Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented from GFs subcontracts in the IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, a CMOS compatible new material Si doped HfO2 for electrocaloric/ pyroelectric effects on chip, modelling of the 22FDX devices in the higher GHz range and first 5G Dual Band transceiver blocks designed in 22FDX

[1]  Sven Mothes,et al.  Flexible virtual source compact model for fast modeling of new channel materials and device architectures , 2018 .

[2]  Akash Kumar,et al.  A physical synthesis flow for early technology evaluation of silicon nanowire based reconfigurable FETs , 2018, 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[3]  C. Hu,et al.  Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications , 2019, IEEE Transactions on Electron Devices.

[4]  Wenke Weinreich,et al.  Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 , 2018 .

[5]  W. Weinreich,et al.  Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films , 2019, Applied Physics Letters.

[6]  Sherif Shakib,et al.  A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS , 2018, IEEE Microwave and Wireless Components Letters.

[7]  Akash Kumar,et al.  Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors , 2019, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[8]  A. Khakifirooz,et al.  A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters , 2009, IEEE Transactions on Electron Devices.

[9]  Lei Zhang,et al.  Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films , 2018, Physical Review Materials.

[10]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[11]  Huihua Liu,et al.  A 24–30 GHz CMOS LNA with 2.05dB NF and 0.6dB in-band gain ripple for 5G-applications , 2018, 2018 IEEE MTT-S International Wireless Symposium (IWS).

[12]  M. Czernohorsky,et al.  Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films , 2018, Applied Physics Letters.

[13]  Abdolali Abdipour,et al.  A 33-GHz LNA for 5G Wireless Systems in 28-nm Bulk CMOS , 2018, IEEE Transactions on Circuits and Systems II: Express Briefs.

[14]  William Paul King,et al.  Direct Measurement of Pyroelectric and Electrocaloric Effects in Thin Films , 2017 .

[15]  T. Boscke,et al.  Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors , 2011, 2011 International Electron Devices Meeting.

[16]  M. Fukumi,et al.  Physical Model of Noise Mechanisms in SOI and Bulk-Silicon MOSFETs for RF Applications , 2008, IEEE Transactions on Electron Devices.

[17]  Thomas Mikolajick,et al.  Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology , 2014, IEEE Transactions on Nanotechnology.

[18]  M. Versleijen,et al.  Distributed high frequency effects in bipolar transistors , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.