Method for evaluating single event effect resisting ability of SiP device

The invention discloses a method for evaluating a single event effect resisting ability of an SiP device, which comprises the steps of carrying out cap opening protection on SiP; acquiring information of SiP internal chips, and determining whether the radiation resisting performance of SiP internal devices is recorded in a radiation database or not; regarding the whole SiP to reach requirements of a single event resisting index if the radiation database has radiation resisting performance data of the corresponding SiP chips and all of the SiP chips can reach the requirements of the single event resisting index; judging whether the SiP device has chips which are located at stacked packaging or not if a certain SiP internal chip cannot reach the single event resisting index or the radiation database does not have corresponding radiation performance test data of the SiP chip; judging whether the vertical adjacent chips which are located at stacked packaging are identical or not; independently packaging the chip which cannot be radiated below stacked packaging into a device; and carrying out a single event effect test on the chips which are packaged into devices, the chips which are stacked but identical and the chips which are not stacked, acquiring test data, and judging whether the single event resisting index is met or not. The method disclosed by the invention solves a problem that evaluation for the single event effect resisting ability of the SiP device is inaccurate.