论文信息 - On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs

Channel field and stress time dependent critical voltage in dynamic ON resistance of GaN HEMTs is reported for the first time. Electro – Photo Luminescence, low temperature stress experiments and their dependence on device parameters is correlated to propose a novel channel field and buffer trap interaction mechanism regulating the critical voltage which is not related to new trap generation or hot electrons.

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