Superfine structures of semiconductors grown by molecular‐beam epitaxy

Abstract We initiated the present study to investigate experimentally a fundamental quanturn-mechanical effect—the resonant transmission of electrons through potential barriers in semicon- ductors. The phenomenon of such resonance is a familiar one. In the simple case of a double barrier, the incident electrons are able to tunnel through both barriers without attenuation if their energies coincide with the resonant energies.1 In the caSe of a series of equally spaced barriers, e.g., that of the KronigPenney model of a one-dimensional crystal, the electronic structure exhibits forbidden bands of attenuation that are separated by allowed bands where perfect transmission of electrons would occur.

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