Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction
暂无分享,去创建一个
[1] A. La Magna,et al. Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates , 2014 .
[2] G. Litrico,et al. Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films , 2013 .
[3] S. Harada,et al. Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method , 2013 .
[4] A. Magna,et al. Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties , 2012 .
[5] A. La Magna,et al. Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes , 2012 .
[6] M. Syväjärvi,et al. On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates , 2012 .
[7] G. Ferro,et al. Effect of initial substrate conditions on growth of cubic silicon carbide , 2011 .
[8] C Locke,et al. Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application , 2011, Journal of Microelectromechanical Systems.
[9] M. Camarda,et al. Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus , 2011 .
[10] G. Ferro,et al. On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates , 2011 .
[11] A. Henry,et al. Chloride‐based CVD of 3C‐SiC Epitaxial Layers on On‐axis 6H (0001) SiC Substrates , 2010 .
[12] Andrea Canino,et al. Stacking faults evolution during epitaxial growths: Role of surface the kinetics , 2010 .
[13] A. La Magna,et al. Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics , 2010 .
[14] C. Bongiorno,et al. Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films , 2009 .
[15] A. Magna,et al. Monte Carlo study of the step flow to island nucleation transition for close packed structures , 2009 .
[16] P. Cochat,et al. Et al , 2008, Archives de pediatrie : organe officiel de la Societe francaise de pediatrie.
[17] A. La Magna,et al. Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC , 2008 .
[18] M. Abe,et al. Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects , 2008 .
[19] A. La Magna,et al. Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study , 2008 .
[20] Francesco La Via,et al. A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures , 2007, J. Comput. Phys..
[21] P. Neudeck,et al. Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias , 2007 .
[22] D. Chaussende,et al. Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor-Liquid-Solid Mechanism , 2006 .
[23] P. Neudeck,et al. CFD Growth of 3C-SiC on 4H/6H Mesas , 2006 .
[24] Masayuki Abe,et al. Fabrication and Characterization of 3C‐SiC‐Based MOSFETs , 2006 .
[25] H. Matsunami,et al. Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition , 2004 .
[26] T. Frauenheim,et al. Structure and motion of basal dislocations in silicon carbide , 2003 .
[27] S. Nishino,et al. Bulk crystal growth of cubic silicon carbide by sublimation epitaxy , 2003 .
[28] Tsunenobu Kimoto,et al. Step-controlled epitaxial growth of SiC: High quality homoepitaxy , 1997 .
[29] H. Matsunami,et al. Nucleation and step motion in chemical vapor deposition of SiC on 6H‐SiC{0001} faces , 1994 .
[30] T. Kimoto,et al. Silicon Carbide Epitaxy , 2015 .
[31] C. Bongiorno,et al. High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates , 2010 .