갈륨 나이트라이드 기반의 전력소자 구동회로 요건에 대한 연구

All power conversion or management system, the efficiency is very important. The process of converting the power, always a loss. GaN(Enhancement mode power GaN FET) devices are Ron low and fast switching characteristics because it is possible to effectively power conversion in the sense that, in many countries around the world the development progress. In this paper, an analysis of the switching characteristics of GaN devices, and the Boost converter circuit for Power Mosfet with GaN"s behavior, comparison and verification.