Temperature dependence of the energy gap in semiconductors
暂无分享,去创建一个
[1] G. D. Pettit,et al. Exciton Absorption and Emission in InP , 1964 .
[2] W. J. Choyke,et al. EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC , 1962 .
[3] M. Sturge. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .
[4] J. R. Dixon,et al. Optical Properties ofn-Type Indium Arsenide in the Fundamental Absorption Edge Region , 1961 .
[5] J. A. Morrison,et al. The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra , 1959 .
[6] D. A. Kleinman,et al. Infrared Properties of Hexagonal Silicon Carbide , 1959 .
[7] J. A. Morrison,et al. The heat capacity of diamond between 12·8° and 277°k , 1958 .
[8] E. Adams. Vasileff's Calculation of Electronic Self-Energy in Semiconductors , 1957 .
[9] E. Antončík. On the theory of temperature shift of the absorption curve in non-polar crystals , 1955 .
[10] H. Y. Fan. Temperature Dependence of the Energy Gap in Semiconductors , 1951 .
[11] J. Bardeen,et al. Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .
[12] H. Y. Fan. Temperature Dependence of the Energy Gap in Monatomic Semiconductors , 1950 .
[13] R. Rompe,et al. Über den Einfluß der Wärmedehnung auf das Absorptionsspektrum von Isolatoren , 1942 .