Influence of bismuth as a surfactant on the growth of germanium on silicon

The influence of a Bi surfactant layer on the growth of Ge on Si(100) substrates was investigated by using a medium‐energy ion‐backscattering spectrometer and a transmission electron microscope. A monolayer of Bi predeposited on the Si substrates suppressed islanding in the subsequent molecular‐beam‐epitaxial growth of Ge. The Bi atoms moved on top of the Ge film during the growth process.

[1]  M. S. Finney,et al.  Strain relaxation during the surfactant modified epitaxial growth of Ge/Si(001) , 1992 .

[2]  H. Osten,et al.  Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant , 1992 .

[3]  H. Osten,et al.  The influence of surfactants on growth modes in molecular‐beam epitaxy: The growth of germanium layers on Si(100) , 1992 .

[4]  Reuter,et al.  Local dimer exchange in surfactant-mediated epitaxial growth. , 1992, Physical review letters.

[5]  S. Higuchi,et al.  The growth of Ge on a Te/Si(001) surface: surface catalytic epitaxy , 1991 .

[6]  M. S. Finney,et al.  The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001) , 1991 .

[7]  Norris,et al.  Strain relaxation during the initial stages of growth in Ge/Si(001). , 1991, Physical review. B, Condensed matter.

[8]  Reuter,et al.  Influence of surfactants in Ge and Si epitaxy on Si(001). , 1990, Physical review. B, Condensed matter.

[9]  Tromp,et al.  Novel strain-induced defect in thin molecular-beam epitaxy layers. , 1989, Physical review letters.

[10]  Reuter,et al.  Surfactants in epitaxial growth. , 1989, Physical review letters.

[11]  Y. Kido,et al.  Damage profiling of Ar + -irradiated Si(100) and GaAs(100) by medium energy ion scattering , 1989 .

[12]  K. Kavanagh,et al.  Thin epitaxial Ge-Si(111) films: Study and control of morphology , 1987 .

[13]  Y. Bando,et al.  Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates , 1987 .

[14]  J. Bean.  Strained-Layer Epitaxy of Germanium-Silicon Alloys , 1985, Science.

[15]  H. Ueba,et al.  Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface , 1985 .

[16]  W. Gibson,et al.  Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering , 1981 .