论文信息 - Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications

Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications

SiGeSn technique has been investigated, ranging from material growth to the device demonstration including lasers and photodetectors. The maximum Sn composition of 22.3% was achieved, while the operation wavelength of devices is up to 3 μm, indicating the great potential applications in integrated mid-infrared photonics.

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[5] Wei Du,et al. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence , 2014 .