High mobility n-channel organic thin-film transistors and complementary inverters

We report on n-channel organic thin-film transistors (OTFTs) with field-effect mobility comparable to that typically reported for p-channel OTFTs fabricated from pentacene. The OTFTs were fabricated on oxidized silicon wafers using N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI–C13H27) as the semiconductor and with Au, Cr, Al, and LiF∕Al source and drain contacts. Accumulation mode n-channel transistor operation is demonstrated for all contact metals despite the large differences in their work functions. High field-effect mobility near 0.6cm2∕Vs and large Ion∕Ioff of 107 were achieved. Device performance is sufficient to demonstrate pentacene∕PTCDI–C13H27 TFT complementary inverters with record gain.

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