论文信息 - Analytic Expressions for the Critical Charge in CMOS Static RAM Cells

Analytic Expressions for the Critical Charge in CMOS Static RAM Cells

Common trajectories associated with logic state reversal are discussed, and an analytical expression is developed for the critical charge required for single event upset of CMOS static RAMs.

R. C. Jaeger | S. E. Diehl | R. M. Fox

[1] S. Kirkpatrick. Modeling diffusion and collection of charge from ionizing radiation in silicon devices , 1979, IEEE Transactions on Electron Devices.

[2] C. Hu,et al. Alpha-particle-induced field and enhanced collection of carriers , 1982, IEEE Electron Device Letters.

[3] R. R. O'Brien,et al. A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices , 1981, IEEE Electron Device Letters.