论文信息 - Composition dependent Raman intensity ratio between GaBi and GaAs mode in GaAsBi - 字舞流文

Composition dependent Raman intensity ratio between GaBi and GaAs mode in GaAsBi

We investigated the intensity ratio between GaBi and GaAs-LO mode in Raman scattering. Good linear dependence on the Bismuth content for x<0.03 provides a new way to determine the Bismuth composition in GaAsBi.

Ning Li | Pingping Chen | Xingjun Wang | W. Qiu

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