Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

[1]  John Batey,et al.  Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition , 1986 .

[2]  A. H. Carim,et al.  A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides , 1985 .

[3]  H. Kurz,et al.  Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes , 1993 .

[4]  G. Lucovsky,et al.  Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films , 1989 .

[5]  G. Lucovsky,et al.  Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition , 1990 .

[6]  G. Lucovsky,et al.  The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor deposition , 1989 .

[7]  G. Lucovsky,et al.  Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition , 1993 .

[8]  Mehmet C. Öztürk,et al.  Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide , 1992 .

[9]  C. R. Helms,et al.  The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 , 1988 .

[10]  A. G. Milnes,et al.  Semiconductor Devices and Integrated Electronics , 1980 .

[11]  G. Lucovsky,et al.  Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process , 1992 .

[12]  G. Lucovsky,et al.  Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process , 1992 .

[13]  D. K. Shih,et al.  Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing , 1990 .