论文信息 - Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes

Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes

The temporal evolution of the photocurrent in interdigitated GaAs metal‐semiconductor‐ metal Schottky photodiodes is directly measured in the time domain by photoconductive and electro‐optic sampling with subpicosecond resolution. Excellent agreement is found between experiment and theoretical data obtained by two‐dimensional self‐consistent Monte Carlo calculations.

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