Model design of non-volatile SRAM based on Magnetic Tunnel Junction

Recently there has been considerable interest in MTJ based MRAM because of its promising characteristics exhibiting high non-volatility combined with high density and radiation hardness as well as nondestructive readout (NDRO), very high radiation tolerance higher write/erase endurance compared to the FRAMs, and virtually unlimited power-off storage capability. This paper presents the design of Static Random Access Memory (SRAM) cell followed by MTJ that makes SRAM cell non-volatile, in which the output of SRAM cell having logic state 0 and 1 changes the direction of the moment of the free magnetic layer which is used for the information storage in MTJ device.

[1]  Hao Meng,et al.  Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer , 2005, IEEE Transactions on Magnetics.

[2]  B. J. Baker.  A Model for the Behavior of Magnetic Tunnel Junctions , 2003 .

[3]  M. Durlam,et al.  Nonvolatile RAM based on magnetic tunnel junction elements , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[4]  E. Seevinck,et al.  An SRAM array based on a four-transistor CMOS SRAM cell , 2003 .

[5]  E. Belhaire,et al.  Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-CMOS design , 2006, 2006 IEEE International Behavioral Modeling and Simulation Workshop.

[6]  E. Belhaire,et al.  A non-volatile flip-flop in magnetic FPGA chip , 2006, International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006..

[7]  S. Pandharpure.  Process development for integration of CoFeB/MgO-based magnetic tunnel junction (MTJ) device on silicon , 2007 .

[8]  Jon M. Slaughter,et al.  The science and technology of magnetoresistive tunneling memory , 2002 .