论文信息 - On Idlow with Emphasis on Speculative SPICE Modeling

On Idlow with Emphasis on Speculative SPICE Modeling

An empirical correlation model of Idlow, the MOSFET drain current measured at Vgs=Vdd/2 and Vds=Vdd, where Vdd is the supply voltage, is proposed based on the alphapower law model. It enables a comprehensive analysis of Idlow over a wide range of device geometry, supply voltage, and temperature in multi-threshold-voltage technologies. Built upon and verified by electrical-test data of 90nm partially-depleted (PD) silicon-on-insulator (SOI) technologies, the newly developed methodology provides practical and efficient guidelines to device target projection and target-based speculative SPICE model extraction.

[1] E.J. Nowak,et al. The effective drive current in CMOS inverters , 2002, Digest. International Electron Devices Meeting,.

[2] D. Greenlaw,et al. Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[3] K.A. Jenkins,et al. Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating , 1995, IEEE Electron Device Letters.

[4] A. R. Newton,et al. Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas , 1990 .

[5] Norman J. Rohrer,et al. SOI circuit design concepts , 2000 .

[6] James D. Meindl,et al. A physical alpha-power law MOSFET model , 1999 .

[7] Ishiuchi,et al. Alpha-Power Law MOSFET Model and its Applications to CMOS Inverter Delay and Other Formulas , 2004 .