RF and noise model of gate-all-around MOSFETs

Silicon-on-insulator (SOI) devices are excellent candidates to become an alternative to conventional bulk CMOS. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as surrounding gate (SGT) or gate-all-around (GAA). These devices could be used for high-frequency application due to a significant increase in the transition frequency fit for these devices. We present a new analytical model for cylindrical undoped (lightly doped) GAA or SGT MOSFETs for dc, RF and noise analyses. The model is based on a surface potential formulation for charge control and a drift-diffusion transport model. Short-channel effects, velocity saturation effects and quantum effects have been incorporated in the model. The dc model has been extended to ac and noise using the active transmission line method. Using this model, GAA RF and noise performances are studied.

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