Growth and Characterization of GaN and AL x GA 1−x N Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates
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T. Gehrke | R. Davis | K. Linthicum | T. Zheleva | P. Rajagopal | O. Nam | D. Thomson | M. Bremser | E. Carlson
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