Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes
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Jianchang Yan | Jinmin Li | Junxi Wang | Che-Hao Liao | Yi Lu | Zhiyuan Liu | Xiaohang Li | Wen Gu
[1] Xiaohang Li,et al. BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures , 2020, Journal of Physics D: Applied Physics.
[2] Zi-hui Zhang,et al. BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer , 2020, Journal of Physics D: Applied Physics.
[3] J. Ryou,et al. III-Nitride Deep UV LED Without Electron Blocking Layer , 2019, IEEE Photonics Journal.
[4] Xiaohang Li,et al. Polarization properties of wurtzite III nitride indicate the principle of polarization engineering , 2018, 1808.07211.
[5] Young Jae Park,et al. Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application , 2018, Applied Surface Science.
[6] Hao-Chung Kuo,et al. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency , 2018, Nanoscale Research Letters.
[7] Y. Taniyasu,et al. High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content , 2018 .
[8] Haiding Sun,et al. Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering , 2017 .
[9] Young Jae Park,et al. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction , 2017 .
[10] Muwei Zhang,et al. Structural and electronic properties of wurtzite BxAl1–xN from first‐principles calculations , 2017 .
[11] Jianchang Yan,et al. Effect of AlN buffer on the properties of AlN films grown on sapphire substrate by MOCVD , 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
[12] J. C. Li,et al. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices , 2016, Scientific Reports.
[13] E. O’Reilly,et al. Band gap bowing and optical polarization switching in Al 1−x Ga x N alloys , 2015 .
[14] M. Wraback,et al. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices , 2015 .
[15] Q. Yan,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency , 2014 .
[16] G. Fan,et al. Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier , 2014 .
[17] Yen-Kuang Kuo,et al. Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes , 2013, Photonics West - Optoelectronic Materials and Devices.
[18] L. Largeau,et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications , 2012 .
[19] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .
[20] Jing Li,et al. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence , 2003 .
[21] A. Osinsky,et al. Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices , 2000 .
[22] K. Kumakura,et al. Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field , 1999 .
[23] Umesh K. Mishra,et al. ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES , 1999 .
[24] W. Grieshaber,et al. Enhancement of deep acceptor activation in semiconductors by superlattice doping , 1996 .
[25] R. Street,et al. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .
[26] Nelson,et al. Consistent structural properties for AlN, GaN, and InN. , 1995, Physical review. B, Condensed matter.
[27] Xiaohang Li,et al. Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures , 2017 .
[28] Young Jae Park,et al. Band alignment of B 0 . 14 Al 0 . 86 N / Al 0 . 7 Ga 0 . 3 N heterojunction , 2017 .
[29] J. Pankove,et al. Epitaxially grown AlN and its optical band gap , 1973 .