CDTE AND CD1-XZNXTE FOR NUCLEAR DETECTORS : FACTS AND FICTIONS
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P. Siffert | P. Siffert | M. Hage-ali | M. Hage-Ali | J. M. Koebel | R. Regal | P. Fougeres | R. Régal | P. Fougères
[1] T. Schlesinger,et al. Growth and characterization of p-type Cd1 − xZnxTe (x = 0.2, 0,3, 0.4) , 1997 .
[2] Y. Marfaing. Self-compensation in II–VI compounds , 1981 .
[3] Paul Siffert,et al. Deep levels in semi-insulating CdTe , 1993 .
[4] P. Luke,et al. Performance of CdZnTe coplanar-grid gamma-ray detectors , 1995 .
[5] E. Molva,et al. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation , 1985 .
[6] P. M. Raccah,et al. Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates , 1985 .
[7] R. F. Brebrick. Partial Pressures in the Cd‐Te and Zn‐Te Systems , 1971 .
[8] K. Benz,et al. Vapor pressure scanning of non-stoichiometry in CdZnTe , 1993 .
[9] J. F. Schetzina,et al. Properties of CdZnTe crystals grown by a high pressure Bridgman method , 1992 .
[10] E. Weigel,et al. Comparison of Bridgman and THM method regarding the effect of In doping and distribution of Zn in CdTe , 1996 .
[11] Pedro A. Montano,et al. CdZnTe x-ray detector for 30- to 100-keV energy , 1996, Optics & Photonics.
[12] K. Parnham. Recent progress in Cd1−xZnxTe radiation detectors , 1996 .
[13] K. Cherkaoui,et al. Properties of Cd1−xZnxTe crystals grown by high pressure Bridgman for nuclear detection , 1998 .
[14] Yael Nemirovsky,et al. Study of the charge collection efficiency of CdZnTe radiation detectors , 1996 .
[15] Arnold Burger,et al. Charge‐carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors , 1993 .
[16] Performance of a coaxial geometry Cd1−xZnx Te detector , 1996 .
[17] R. F. Brebrick,et al. CdTe I: Solidus curve and composition-temperature-tellurium partial pressure data for Te-rich CdTe(s) from optical density measurements , 1996 .
[18] K. Lynn,et al. Crystallographic and metallurgical characterization of radiation detector grade cadmium telluride materials , 1993 .
[19] Jean Lajzerowicz,et al. Gamma- and X-ray detectors manufactured from Cd1−xZnx Te grown by a high pressure bridgman method , 1993 .
[20] Jeffrey J. Derby,et al. Modeling the vertical Bridgman growth of cadmium zinc telluride II. Transient analysis of zinc segregation , 1995 .
[21] F. A. Kröger. The defect structure of CdTe , 1977 .
[22] Beatrice Fraboni,et al. Deep energy levels in CdTe and CdZnTe , 1998 .
[23] Stuart A. Rice,et al. Photoconductivity of solids , 1978 .
[24] B. Tseng,et al. Crystal growth of CdTe alloyed with Zn, Se and S , 1997 .
[25] W. Stadler,et al. Defects in CdTe and Cd1−xZnxTe , 1996 .
[26] Mapping high-pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te , 1997 .
[27] J. Drápala,et al. Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures , 1996 .
[28] J. F. Butler,et al. CdTe low level gamma detectors based on a new crystal growth method , 1988 .
[29] M. Ohmori,et al. High quality CdTe and its application to radiation detectors , 1993 .
[30] H. Kimura,et al. Melt compositions of II–VI compounds during crystal growth in a high-pressure furnace , 1973 .
[31] R. Triboulet. The Travelling Heater Method (THM) for Hg1−xCdxTe and related materials , 1994 .