Avalanche Photodiodes in High-Speed Receiver Systems
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[1] Joe C. Campbell,et al. GaN avalanche photodiodes , 2000 .
[2] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[3] R. Baertsch. Low-frequency noise measurements in silicon avalanche photodiodes , 1966 .
[4] Chee Hing Tan,et al. Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end , 2006 .
[5] J. David,et al. A simple model to determine multiplication and noise in avalanche photodiodes , 1998 .
[6] J. C. Dries,et al. Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes , 2002, IEEE Photonics Technology Letters.
[7] M. Hopkinson,et al. Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ , 2007, IEEE Journal of Quantum Electronics.
[8] H. Ando,et al. Ionization coefficient measurement in GaAs by using multiplication noise characteristics , 1981 .
[9] Y. L. Goh,et al. A Comparison of the Lower Limit of Multiplication Noise in InP and InAlAs Based APDs for Telecommunications Receiver Applications , 2006, LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
[10] G. E. Stillman,et al. Chapter 5 Avalanche Photodiodes , 1977 .
[11] J.C. Campbell,et al. Recent Advances in Telecommunications Avalanche Photodiodes , 2007, Journal of Lightwave Technology.
[12] Stephen R. Forrest,et al. Evidence for tunneling in reverse‐biased III‐V photodetector diodes , 1980 .
[13] J. David,et al. Optimization of InP APDs for High-Speed Lightwave Systems , 2008, Journal of Lightwave Technology.
[14] S. Forrest,et al. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .
[15] C. Tan,et al. Avalanche Noise Characteristics in Submicron InP Diodes , 2008, IEEE Journal of Quantum Electronics.
[16] Dieter Bimberg,et al. Wide‐band frequency response measurements of photodetectors using low‐level photocurrent noise detection , 1993 .
[17] Chee Hing Tan,et al. Temperature Dependence of Avalanche Breakdown in InP and InAlAs , 2010, IEEE Journal of Quantum Electronics.
[18] M. Hopkinson,et al. Avalanche Multiplication in InAlAs , 2007, IEEE Transactions on Electron Devices.
[19] G. Agrawal. Fiber‐Optic Communication Systems , 2021 .
[20] Jasprit Singh,et al. Semiconductor Optoelectronics: Physics and Technology , 1995 .
[21] B.E.A. Saleh,et al. Statistical correlation of gain and buildup time in APDs and its effects on receiver performance , 2006, Journal of Lightwave Technology.
[22] John P. R. David,et al. Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes , 1998 .