论文信息 - Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using point-contact probes. The measurement setup for in-situ operation and typical transistor characteristics are presented. Parameters are extracted which relate to minority and majority carriers, buried oxide, and the Si-SiO/sub 2/ interface.<<ETX>>

S. Cristoloveanu | S. Williams | S. Cristoloveanu | S. Williams

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