论文信息 - The effects of write/erase cycling on data loss in EEPROMs

The effects of write/erase cycling on data loss in EEPROMs

Increasing leakage at low electric fields is observed in thin silicon dioxide films after they have been subjected to write/erase cycling. This mechanism anneals out after high temperature baking. Conventional lifetesting techniques for EEPROMs may result in overly optimistic estimations of data retention.

D. Baglee | M. Smayling | D.A. Baglee | M.C. Smayling

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