论文信息 - Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe - 字舞流文

Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

J. Dell | L. Faraone | G. Umana-Membreno | J. Antoszewski | W. Lu | X. Chen | Z. Ye | H. Kala | R. Ding | L. He | W. D. Hu