Texture-control of lead zirconate titanate films for actuator applications

A combination of the preparation technique for ferroelectric films such as lead zirconate titanate (PZT) and the micromachining of Si is considered to be an effective way to fabricate piezoelectric microdevices like microactuators called a microelectromechanical system (MEMS). However, the amount of the displacement and force of PZT thin films is not sufficient in some applications of microactuators. To achieve the property of large displacement, increase of the film thickness or improvement of the piezoelectric property is required. One of the techniques to improve the ferroelectric and piezoelectric properties is assumed to be the arrangement of the polarization direction using a texture control process. We successfully preparaed the (100) and (111) dominant oriented Pb(Zr1-xTix)O3 thin films using a chemical solution deposition (CSD) process. On the other hand, an arc-discharged reactive ion-plating (ADRIP) method is one of the candidates to fabricate the thick PZT films because of high deposition rate such as 3 μm/h. In this work, the texture-controlled PZT thin and thick films deposited onto Pt/Ti/SiO2/Si substrates were prepared using CSD or ADRIP process for actuator applications. In the case of ADRIP process, (100) and (111) dominant oriented PZT thick films was formed onto CSD derived and texture controlled PZT thin film layer.

[1]  Jun Akedo,et al.  Microstructure and Electrical Properties of Lead Zirconate Titanate (Pb(Zr52/Ti48)O3) Thick Films Deposited by Aerosol Deposition Method , 1999 .

[2]  M. Sakata,et al.  Static Characteristics of Piezoelectric Thin Film Buckling Actuator , 1996 .

[3]  Jonathan J. Bernstein,et al.  Dielectric, ferroelectric, and piezoelectric properties of lead zirconate titanate thick films on silicon substrates , 1995 .

[4]  Nava Setter,et al.  Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates , 1994 .

[5]  Y. Fukuda,et al.  Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique , 1994 .

[6]  Hisao Suzuki,et al.  Low-Temperature Processing of Pb(Zr0.53,Ti0.43)O3 Thin Films by Sol-Gel Casting , 2000 .

[7]  J. Akedo,et al.  Actuation Properties of Lead Zirconate Titanate Thick Films Structured on Si Membrane by the Aerosol Deposition Method , 2000 .

[8]  K. No,et al.  Fabrication of PZT Thick Films on Silicon Substrates for Piezoelectric Actuator , 2000 .

[9]  Paul Muralt,et al.  Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions , 1996 .

[10]  Masaru Okada,et al.  Preparation and electrical properties of MOCVD‐deposited PZT thin films , 1991 .

[11]  Y. Akiyama,et al.  Development of Lead Zirconate Titanate Family Thick Films on Various Substrates , 1999 .

[12]  Masatoshi Adachi,et al.  Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties , 1987 .

[13]  D. A. Barrow,et al.  Characterization of thick lead zirconate titanate films fabricated using a new sol gel based process , 1997 .

[14]  Paul Muralt,et al.  Design of novel thin-film piezoelectric accelerometer , 1996 .

[15]  Takaaki Tsurumi,et al.  Analysis of Bending Displacement of Lead Zirconate Titanate Thin Film Synthesized by Hydrothermal Method , 1993 .

[16]  U. Böttger,et al.  Fabrication and Characterization of a PZT thin Film Actuator for a Micro Electromechanical Switch Application , 2001 .

[17]  Tae-Young Kim,et al.  Microstructure Control in Mocvd PZT Thin Films , 1996 .

[18]  L. E. Cross,et al.  Fabrication and Electrical Properties of Lead Zirconate Titanate Thick Films , 1996 .

[19]  Paul Muralt,et al.  Fabrication and characterization of PZT thin-film vibrators for micromotors , 1995 .