Morphology of thin SrF2 films on InP(111) studied by reflection high-energy electron diffraction

[1]  B. Desbat,et al.  Study of a chemical cleaning of InP(100) substrates by infrared absorption and nuclear reaction analysis , 1993 .

[2]  J. Falta,et al.  Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED) , 1992 .

[3]  Weiss,et al.  Role of ionic defects at semiconductor-insulator interfaces: Spectroscopic results on CaF2/InP(001) and SrF2/InP(001) structures. , 1992, Physical review. B, Condensed matter.

[4]  S. Raoux,et al.  Heteroepitaxial growth and characterization of SrF2/(100)InP , 1992 .

[5]  S. Heun,et al.  The initial stages of epitaxial growth of silicon on Si(100)−2 × 1 , 1991 .

[6]  T. Narusawa,et al.  In situ low‐energy ion scattering analysis of InP surface during molecular‐beam epitaxy , 1990 .

[7]  W. Göpel,et al.  Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface , 1990 .

[8]  D. N. Bose,et al.  Fluoride dielectric films on InP for metal‐insulator‐semiconductor applications , 1990 .

[9]  R. Feidenhans'l Surface structure determination by X-ray diffraction , 1989 .

[10]  P. Alnot,et al.  Characterization of SrF2 thin films and of SrF2/InP structures , 1988 .

[11]  K. Ando,et al.  In-situ observation of defect formation in CaF2(111) surfaces induced by low energy electron bombardment , 1987 .

[12]  I. Robinson,et al.  X-ray determination of the GaSb(111)2×2 surface structure , 1987 .

[13]  A. Barrière,et al.  Electrical properties of SrF2/InP (100) diodes and SrF2 thin films , 1987 .

[14]  J. Massies,et al.  A Chemical Etching Process to Obtain Clean InP {001} Surfaces , 1986 .

[15]  M. Henzler Measurement of surface defects by low-energy electron diffraction , 1984 .

[16]  J. Phillips,et al.  Epitaxial relations in alkaline earth fluoride–semiconductor systems , 1984 .

[17]  W. D. Johnston,et al.  Growth of Single‐Crystalline Epitaxial Group II Fluoride Films on InP ( 001 ) by Molecular‐Beam Epitaxy , 1983 .

[18]  Leonard C. Feldman,et al.  Epitaxial growth of alkaline earth fluorides on semiconductors , 1983 .

[19]  Charles W. Tu,et al.  Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy , 1983 .

[20]  L. Feldman,et al.  Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP , 1983 .

[21]  F. Jona,et al.  REVIEW ARTICLE: Low-energy electron diffraction for surface structure analysis , 1982 .

[22]  M. Salvi,et al.  N-channel MISFETs on semi-insulating InP for logic applications , 1982 .

[23]  Takeshi Kobayashi,et al.  Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET , 1980 .

[24]  F. B. Fank,et al.  High efficiency 90 GHz InP Gunn oscillators , 1980 .

[25]  H. Ohno,et al.  Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy , 1980 .

[26]  C. Kittel Introduction to solid state physics , 1954 .

[27]  W. Göpel,et al.  Surface morphology of epitaxial CaF2 and SrF2 layers grown onto InP(001) studied by atomic force microscopy and low-energy electron diffraction , 1992 .

[28]  J. Falta,et al.  Electron diffraction at stepped homogeneous and inhomogeneous surfaces , 1990 .

[29]  C. W. Tu,et al.  Lattice‐matched single‐crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular‐beam epitaxy , 1984 .

[30]  G. D. Rieck,et al.  International tables for X-ray crystallography , 1962 .