AlGaInN laser diode bar and array technology for high power and individually addressable applications
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Stephen P. Najda | Lucja Marona | Piotr Perlin | Grzegorz Targowski | Tadek Suski | Mike Boćkowski | Mike Leszczyński | Przemek Wisniewski | Robert Czernecki | Robert Kucharski
[1] Mingming Tan,et al. Visible light communications using a directly modulated 422 nm GaN laser diode. , 2013, Optics letters.
[2] M. Boćkowski,et al. Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes , 2009 .
[3] R. Dwiliński,et al. Excellent crystallinity of truly bulk ammonothermal GaN , 2008 .
[4] R. Kucharski,et al. InGaN Laser Diode Mini-Arrays , 2011 .
[5] Ulrich Schmid,et al. Integrated RGB laser light module for autostereoscopic outdoor displays , 2015, Photonics West - Lasers and Applications in Science and Engineering.
[6] M. Boćkowski,et al. Multi feed seed (MFS) high pressure crystallization of 1–2 in GaN , 2012 .
[7] Tobias Meyer,et al. Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate. , 2008, Optics express.
[8] Uwe Strauss,et al. Longitudinal mode competition and mode clustering in (Al,In)GaN laser diodes. , 2014, Optics express.