论文信息 - Proton implantation of the power MOSFET to improve its built-in diode reverse recovery

Proton implantation of the power MOSFET to improve its built-in diode reverse recovery

Proton implantation has been implemented in the power MOSFET to improve its built-in diode reverse recovery characteristics. The diode switching characteristics and the power MOSFET parameters have been measured before and after the proton implantation and for different annealing times. A sevenfold reduction in diode reverse recovery charge has been achieved with virtually no impact on other device parameters.

T. P. Chow | R. Zhu

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