원통형 PN 접합의 항복전압에 대한 근사식 과 민감도

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga’s results for rj/Wpp≤0.3 and with numerical results for rj/Wpp≥0.3 within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.