论文信息 - Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces

Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces

Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 ×7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 ×7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 ×1014 cm-2.

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