Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field
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Cherifa Tahanout | Hakim Tahi | Boualem Djezzar | Mohamed Boubaaya | Sidi Mohammed Merah | Bacharia Nadji | Nadia Saoula | S. M. Merah | B. Djezzar | H. Tahi | N. Saoula | M. Boubaaya | Cherifa Tahanout | B. Nadji
[1] H. E. Boesch,et al. Time-dependent degradation of MOSFET channel mobility following pulsed irradiation , 1989 .
[2] V. Huard. Two independent components modeling for Negative Bias Temperature Instability , 2010, 2010 IEEE International Reliability Physics Symposium.
[3] Ivica Manic,et al. Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs , 2009, Microelectron. Reliab..
[4] Arthur H. Edwards,et al. Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors , 1993 .
[5] Patrick M. Lenahan. Deep level defects involved in MOS device instabilities , 2007, Microelectron. Reliab..
[6] Marvin H. White,et al. Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps , 1994 .
[7] M. Krishnan,et al. Modeling kinetics of gate oxide reliability using stretched exponents , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[8] S. Djorić-Veljković,et al. Negative bias temperature instability in n-channel power VDMOSFETs , 2008, Microelectron. Reliab..
[9] M. Nelhiebel,et al. A two-stage model for negative bias temperature instability , 2009, 2009 IEEE International Reliability Physics Symposium.
[10] Zhijian Yang,et al. Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs , 2002 .
[11] Ninoslav Stojadinovic,et al. Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETS , 1995 .
[12] Cherifa Tahanout,et al. NBTI stress on power VDMOS transistors under low magnetic field , 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).
[13] Z. Prijić,et al. On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs , 2016, IEEE Transactions on Device and Materials Reliability.
[14] Cherifa Tahanout,et al. Investigation of NBTI degradation on power VDMOS transistors under magnetic field , 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).
[15] S. Krishnan,et al. Direct observation of the structure of defect centers involved in the negative bias temperature instability , 2005 .
[16] Tibor Grasser,et al. Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs , 2011, Microelectron. Reliab..
[17] Ivica Manic,et al. NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors , 2016, IEEE Transactions on Nuclear Science.
[18] Vojkan Davidovic,et al. Radiation hardening of power MOSFETs using electrical stress , 2002 .
[19] P. Mialhe,et al. VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements , 2001 .
[20] Patrick M. Lenahan,et al. Observations of negative bias temperature instability defect generation via on the fly electron spin resonance , 2010 .
[21] D. Schroder,et al. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing , 2003 .
[22] Tibor Grasser,et al. Dependence of the negative bias temperature instability on the gate oxide thickness , 2010, 2010 IEEE International Reliability Physics Symposium.
[23] Ivica Manic,et al. Negative bias temperature instability mechanisms in p-channel power VDMOSFETs , 2005, Microelectron. Reliab..
[24] A. Krishnan,et al. Atomic-Scale Defects Involved in the Negative-Bias Temperature Instability , 2007, IEEE Transactions on Device and Materials Reliability.
[25] M. Khare,et al. Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[26] P. Lenahan. Atomic scale defects involved in MOS reliability problems , 2003 .
[27] Dennis B. Brown,et al. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field , 1991 .
[28] B. Kaczer,et al. Analytic modeling of the bias temperature instability using capture/emission time maps , 2011, 2011 International Electron Devices Meeting.
[29] Venkataraman,et al. Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n-GaAs and extracting its magnetic susceptibility , 2016 .
[30] Ivica Manic,et al. Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors , 2014 .
[31] W. Pauli,et al. Exclusion Principle And Quantum Mechanics , 1947 .
[32] Hakim Tahi,et al. Low magnetic field Impact on NBTI degradation , 2015, Microelectron. Reliab..
[33] Ivica Manic,et al. Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs , 2002, Microelectron. Reliab..
[34] G. Groeseneken,et al. Hot-carrier degradation phenomena in lateral and vertical DMOS transistors , 2004, IEEE Transactions on Electron Devices.
[35] O. Koplak,et al. Magnetic field effect on spin dependent conversion of nonequilibrium Si–O chemical bonds on the Czochralski-grown Si crystal surface , 2011 .
[36] Weifeng Sun,et al. Failure Analysis of Superjunction VDMOS Under UIS Condition , 2014, IEEE Transactions on Device and Materials Reliability.
[37] K. Leong,et al. Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled? , 2012, IEEE Transactions on Electron Devices.