Investigation of selective junctions using a newly developed tunnel current model for solar cell applications

[1]  S. Glunz,et al.  Carrier-selective contacts for Si solar cells , 2014 .

[2]  W. Shen,et al.  Simulation of High-Efficiency Crystalline Silicon Solar Cells With Homo–Hetero Junctions , 2013, IEEE Transactions on Electron Devices.

[3]  L. Korte,et al.  Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation , 2013 .

[4]  S. Glunz,et al.  Improved quantitative description of Auger recombination in crystalline silicon , 2012 .

[5]  L. Korte,et al.  Controlled Interfacial Wet-Chemical Oxide for Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells , 2012 .

[6]  C. Ballif,et al.  High-efficiency Silicon Heterojunction Solar Cells: A Review , 2012 .

[7]  C. Ballif,et al.  Current Losses at the Front of Silicon Heterojunction Solar Cells , 2012, IEEE Journal of Photovoltaics.

[8]  Lei Zhao,et al.  Role of the work function of transparent conductive oxide on the performance of amorphous/crystalline silicon heterojunction solar cells studied by computer simulation , 2008 .

[9]  Christopher Blauth,et al.  Data, data, data… , 2007, International journal of clinical practice.

[10]  M. Burgelman,et al.  Numerical modeling of intra-band tunneling for heterojunction solar cells in SCAPS , 2007 .

[11]  A. F. Shulekin,et al.  Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor , 2005 .

[12]  S. Geng,et al.  Precision Thickness Measurement of Ultra-Thin Films via XPS , 2003 .

[13]  W. Fuhs,et al.  AFORS-HET: a computer-program for the simulation of heterojunction solar cells to be distributed for public use , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[14]  A. Froitzheim,et al.  Design criteria for amorphous/crystalline silicon heterojunction solar cells - a simulation study , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[15]  K. Alam,et al.  Accurate modeling of direct tunneling hole current in p-metal–oxide–semiconductor devices , 2002 .

[16]  A. Cuevas,et al.  General parameterization of Auger recombination in crystalline silicon , 2002 .

[17]  Robert W. Dutton,et al.  Density-gradient analysis of MOS tunneling , 2000 .

[18]  Mong-Song Liang,et al.  A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides , 2000 .

[19]  D. A. Clugston,et al.  PC1D version 5: 32-bit solar cell modeling on personal computers , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[20]  S. Laux,et al.  Understanding hot‐electron transport in silicon devices: Is there a shortcut? , 1995 .

[21]  Andreas Schenk,et al.  Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling , 1995 .

[22]  E. Irene Applications of spectroscopic ellipsometry to microelectronics , 1993 .

[23]  Jack R. East,et al.  Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition , 1993 .

[24]  D. Klaassen,et al.  A new recombination model for device simulation including tunneling , 1992 .

[25]  G. Herman,et al.  Influence of the image force on the band gap in semiconductors and insulators , 1980 .

[26]  A. Rothwarf,et al.  Metal–Semiconductor Contacts , 1979 .

[27]  F. D. King,et al.  Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory☆ , 1974 .

[28]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[29]  P. Anderson The Contact Difference of Potential Between Tungsten and Barium. The External Work Function of Barium , 1935 .

[30]  S. Glunz,et al.  Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics , 2014 .

[31]  A. F. Shulekin,et al.  Current model considering oxide thickness non-uniformity in a MOS tunnel structure , 2001 .