The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
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[1] P. Hohenberg,et al. Inhomogeneous Electron Gas , 1964 .
[2] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[3] David P. Bour,et al. Spatial distribution of the luminescence in GaN thin films , 1996 .
[4] J. Furthmüller,et al. Theoretical investigation of edge dislocations in AlN , 1998 .
[5] Pantelides,et al. Native defects and self-compensation in ZnSe. , 1992, Physical review. B, Condensed matter.
[6] E. C. Carr,et al. CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .
[7] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .
[8] Nelson,et al. Consistent structural properties for AlN, GaN, and InN. , 1995, Physical review. B, Condensed matter.
[9] James S. Speck,et al. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition , 1998 .
[10] Sven Öberg,et al. Theory of Threading Edge and Screw Dislocations in GaN , 1997 .
[11] F. Bechstedt,et al. Bond-rotation versus bond-contraction relaxation of (110) surfaces of group-III nitrides , 1998 .
[12] J. Heremans,et al. Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering , 1991 .
[13] A. Zunger,et al. Self-interaction correction to density-functional approximations for many-electron systems , 1981 .
[14] G. Kresse,et al. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .
[15] Lester F. Eastman,et al. Scattering of electrons at threading dislocations in GaN , 1998 .