Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor

Terahertz emission from InGaAs∕InAlAs lattice-matched high electron mobility transistors was observed. The emission appears in a threshold-like manner when the applied drain-to-source voltage UDS is larger than a threshold value UTH. The spectrum of the emitted signal consists of two maxima. The spectral position of the lower-frequency maximum (around 1 THz) is sensitive to UDS and UGS, while that of the higher frequency one (around 5 THz) is not. The lower-frequency maximum is interpreted as resulting from the Dyakonov–Shur instability of the gated two-dimensional electron fluid, while the higher frequency is supposed to result from current-driven plasma instability in the ungated part of the channel. The experimental results are confirmed by and discussed within Monte Carlo calculations of the high-frequency current noise spectra.

[1]  Michael S. Shur,et al.  Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors , 2004 .

[2]  K. Sakai,et al.  Four-wave mixing and direct terahertz emission with two-color semiconductor lasers , 2004 .

[3]  M. Shur,et al.  Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors , 2004 .

[4]  David A. Ritchie,et al.  Terahertz quantum-cascade lasers based on an interlaced photon-phonon cascade , 2004 .

[5]  M. Shur,et al.  Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors , 2002 .

[6]  John L. Reno,et al.  Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors , 2002 .

[7]  Alexander A. Balandin,et al.  Noise and Fluctuations Control in Electronic Devices , 2002 .

[8]  Michael S. Shur,et al.  Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor , 2002 .

[9]  H. Kurz,et al.  Crossover from coherent to incoherent excitation of two-dimensional plasmons in GaAs/Al x Ga 1-x As single quantum wells by femtosecond laser pulses , 2001 .

[10]  K. Unterrainer,et al.  Terahertz emission from GaAs and InAs in a magnetic field , 2001 .

[11]  Bryan Edward Cole,et al.  Terahertz imaging and spectroscopy of human skin in vivo , 2001, SPIE LASE.

[12]  K Papadopoulos,et al.  Conversion of electrostatic to electromagnetic waves by superluminous ionization fronts. , 2001, Physical review letters.

[13]  Mikhail I. Dyakonov,et al.  Plasma Wave Electronics for Terahertz Applications , 2001 .

[14]  Paul Harrison,et al.  Terahertz sources and systems , 2001 .

[15]  A. Cappy,et al.  Monte Carlo simulator for the design optimization of low-noise HEMTs , 2000 .

[16]  R. Bratschitsch.  Coherent THz plasmons in GaAs/AlGaAs superlattices , 1999 .

[17]  A. Cappy,et al.  Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis , 1999 .

[18]  T. Wojtowicz,et al.  Comparison of optical and HRTEM studies of interdiffusion in CdTe/CdMnTe quantum wells , 1998 .

[19]  L. Reggiani,et al.  Microscopic analysis of electron noise in GaAs Schottky barrier diodes , 1997 .

[20]  Varani,et al.  Noise temperature of n+nn+ GaAs structures. , 1996, Physical review. B, Condensed matter.

[21]  Sh. Kogan,et al.  Electronic noise and fluctuations in solids , 1996 .

[22]  Kurz,et al.  THz electromagnetic emission by coherent infrared-active phonons. , 1996, Physical review. B, Condensed matter.

[23]  L. Varani,et al.  Electronic noise of submicron n+nn+ diodes under near‐oscillatory macroscopic behaviors , 1995 .

[24]  Luca Reggiani,et al.  Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's , 1995 .

[25]  L. Varani,et al.  Microscopic simulation of electronic noise in semiconductor materials and devices , 1994 .

[26]  L. Varani,et al.  Microscopic theory of electronic noise in semiconductor unipolar structures , 1994 .

[27]  Shur,et al.  Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. , 1993, Physical review letters.

[28]  Serge Huant,et al.  A far‐infrared spectrometer based on cyclotron resonance emission sources , 1992 .

[29]  Young June Park,et al.  An extended proof of the Ramo-Shockley theorem , 1991 .

[30]  P. Lugli,et al.  The Monte Carlo Method for Semiconductor Device Simulation , 1990 .

[31]  Pellegrini.  Electric charge motion, induced current, energy balance, and noise. , 1986, Physical review. B, Condensed matter.

[32]  P. Lugli,et al.  Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors , 1985, IEEE Transactions on Electron Devices.

[33]  C. Jacoboni,et al.  The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials , 1983 .

[34]  A. Beer,et al.  Galvanomagnetic effects in semiconductors , 1963 .