A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure

A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mVpp input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of ±1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50Ω output buffer, occupies 0.138 mm2 and consumes 21 mA from a 2.3V supply.

[1]  John R. Long,et al.  A low-power SiGe feedback amplifier with over 110GHz bandwidth , 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[2]  Sorin P. Voinigescu,et al.  A 45nm SOI CMOS Class-D mm-Wave PA with >10Vpp differential swing , 2012, 2012 IEEE International Solid-State Circuits Conference.

[3]  The Linh Nguyen Circuit design techniques for high bit rate and high density optical interconnects , 2015, 2015 Optical Fiber Communications Conference and Exhibition (OFC).

[4]  Mark J. W. Rodwell,et al.  A DC-100 GHz Bandwidth and 20.5 dB Gain Limiting Amplifier in 0.25µm InP DHBT Technology , 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[5]  P. Chevalier,et al.  A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives , 2014, 2014 IEEE International Electron Devices Meeting.

[6]  S.P. Voinigescu,et al.  6-k/spl Omega/, 43-Gb/s differential transimpedance-limiting amplifier with auto-zero feedback and high dynamic range , 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

[7]  Joohwa Kim,et al.  Staggered Gain for 100+ GHz Broadband Amplifiers , 2011, IEEE Journal of Solid-State Circuits.