Ultra-Fast Silicon Detectors

Abstract We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R&D topics are discussed.

[1]  W. Maes,et al.  Impact ionization in silicon: A review and update , 1990 .

[2]  Epitaxial silicon devices for dosimetry applications , 2007 .

[3]  M. Benoit,et al.  Simulation of charge multiplication and trap-assisted tunneling in irradiated planar pixel sensors , 2010, IEEE Nuclear Science Symposuim & Medical Imaging Conference.

[4]  K. Sato,et al.  Timing resolution improvement of MPPC for TOF-PET imaging , 2012, 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC).

[5]  M. Morel,et al.  A 9-channel, 100 ps LSB time-to-digital converter for the NA62 Gigatracker readout ASIC (TDCpix) , 2012 .

[6]  Nicola Zorzi,et al.  High-performance PIN photodiodes on TMAH thinned silicon wafers , 2008, Microelectron. J..

[7]  H. Sadrozinski,et al.  Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors , 2007 .

[8]  J. Townsend,et al.  Electricity in gases , 2022 .

[9]  Silicon detectors for the sLHC , 2011 .

[10]  C. Kenney,et al.  3D — A proposed new architecture for solid-state radiation detectors , 1997 .

[11]  P. Allport,et al.  Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1×1016 neq cm2 , 2010 .

[12]  G. Pellegrini,et al.  Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes , 2011 .

[13]  V. Cindro,et al.  Study of anomalous charge collection efficiency in heavily irradiated silicon strip detectors , 2011 .

[14]  R. Klanner,et al.  Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes ☆ , 2010, 1007.4735.

[15]  In Chan Song,et al.  SiPM-PET with a short optical fiber bundle for simultaneous PET-MR imaging , 2012, Physics in medicine and biology.

[16]  Craig S. Levin,et al.  Photo-Detectors for Time of Flight Positron Emission Tomography (ToF-PET) , 2010, Sensors.

[17]  C. Piemonte.  A new Silicon Photomultiplier structure for blue light detection , 2006 .

[18]  V. Fadeyev,et al.  Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors , 2013 .

[19]  G. Mazza,et al.  A silicon pixel readout ASIC with 100 ps time resolution for the NA62 experiment , 2011 .

[20]  Pierre Jarron,et al.  Increased Speed: 3D Silicon Sensors; Fast Current Amplifiers , 2011, IEEE Transactions on Nuclear Science.