The photonic-based telecommunication systems are continuously upgraded to a bit rate of 40 Gbit/s. The demand for faster transmission and the requirement of forward error correction (FEC) in data traffic makes it necessary to further extend the bit rate per channel. One of the key elements to fulfil these demands are high-speed photoreceivers in present and in future optical communication systems. Additional functionalities and cost effective packaging, obtained by a high degree of integration, as well as an increased efficiency and ease of use of the components are mandatory. The InP-based integrated photoreceiver concept with an additional integration of a spot size converter and a redesigned amplifier circuit was developed with these considerations in mind. This new generation of pinTWA Rx-OEICs comprise waveguide-integrated photodiodes with monolithically integrated taper and travelling wave amplifiers with a negative bias-configuration, avoiding an external bias network, and enables the cost effective packaging in a single-chip photoreceiver module with 47 GHz bandwidth.
[1]
W. Schlaak,et al.
37 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s
,
1999,
IEEE Photonics Technology Letters.
[2]
G. Unterborsch,et al.
Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application
,
1996
.
[3]
Heinz-Gunter Bach,et al.
50 GHz photoreceiver modules for RZ and NRZ modulation format comprising InP-OEICs
,
2001,
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).