论文信息 - Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs - 字舞流文

Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

I. Starkov | T. Grasser | C. Jungemann | H. Enichlmair | S. Tyaginov | H. Ceric | Jong-Mun Park