Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors
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Xing Gu | Mark J. Furlong | Joel M. Fastenau | Amy W. K. Liu | Rebecca Martinez | Sasson Amirhaghi | Dmitri Loubychev
[1] Frank Rutz,et al. Advanced III/V quantum-structure devices for high performance infrared focal plane arrays , 2009, Security + Defence.
[2] Partha S. Dutta,et al. The physics and technology of gallium antimonide: An emerging optoelectronic material , 1997 .
[3] D. V. Eddolls,et al. Infrared Detector Materials , 1982 .
[4] Yajun Wei,et al. Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm , 2007 .
[5] Klaus-Werner Benz,et al. White beam X-ray topography at the synchrotron light source ANKA, Research Centre Karlsruhe , 2003 .
[6] Klavs F. Jensen,et al. In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption , 2000 .
[7] Peter Capper,et al. Bulk crystal growth of electronic, optical & optoelectronic materials , 2005 .
[8] P. Rudolph,et al. Present State and Future Tasks of III-V Bulk Crystal Growth , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.