Effects of the Substrate Temperature on the Crystallization and Development of Texture of Mn-Zn Ferrite thin Films Deposited by Ion Beam Sputtering

We investigated the effects of the substrate temperature (T s ) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO 2 /Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing T s due to release of compressive stress. The saturation Magnetization (M s ) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of T s . The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.