Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switching process except for the oxygen ions. Owing to the twofold chemical reaction, the high resistance states are randomly distributed in a wide range. Schottky emission can be obtained through conduction current fitting, and a reaction model is established to demonstrate the special behaviors of the two types of ions, which also clarifies the gradual change of current fitting results.

[1]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[2]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[3]  S. Sze,et al.  Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment , 2013, IEEE Electron Device Letters.

[4]  Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices , 2013, IEEE Electron Device Letters.

[5]  S. Sze,et al.  Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment , 2012, IEEE Electron Device Letters.

[6]  Qi Liu,et al.  Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications , 2010, Nanotechnology.

[7]  Shibing Long,et al.  A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown , 2013, IEEE Electron Device Letters.

[8]  C. Tripp,et al.  An infrared study of the surface chemistry of lithium titanate spinel (Li4Ti5O12) , 2007 .

[9]  龙世兵.  Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices , 2013 .

[10]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[11]  Qi Liu,et al.  Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ , 2008, IEEE Electron Device Letters.

[12]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[13]  Po-Tsun Liu,et al.  Multilevel resistive switching memory with amorphous InGaZnO-based thin film , 2013 .

[14]  M. Tsai,et al.  Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications , 2012, IEEE Electron Device Letters.

[15]  C. Cagli,et al.  Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices , 2013, IEEE Electron Device Letters.

[16]  Po-Tsun Liu,et al.  Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications , 2012 .