Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
暂无分享,去创建一个
Jung-Hui Chen | Simon M. Sze | Kuan-Chang Chang | Min-Chen Chen | Tsung-Ming Tsai | Kai-Huang Chen | Tai-Fa Young | Tian-Jian Chu | Ting-Chang Chang | Yong-En Syu | Rui Zhang | Syuan-Yong Huang | Zhi-Yang Wang | Ding-Hua Bao
[1] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[2] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[3] S. Sze,et al. Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment , 2013, IEEE Electron Device Letters.
[4] Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices , 2013, IEEE Electron Device Letters.
[5] S. Sze,et al. Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment , 2012, IEEE Electron Device Letters.
[6] Qi Liu,et al. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications , 2010, Nanotechnology.
[7] Shibing Long,et al. A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown , 2013, IEEE Electron Device Letters.
[8] C. Tripp,et al. An infrared study of the surface chemistry of lithium titanate spinel (Li4Ti5O12) , 2007 .
[9] 龙世兵. Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices , 2013 .
[10] J. Yang,et al. Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.
[11] Qi Liu,et al. Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ , 2008, IEEE Electron Device Letters.
[12] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[13] Po-Tsun Liu,et al. Multilevel resistive switching memory with amorphous InGaZnO-based thin film , 2013 .
[14] M. Tsai,et al. Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications , 2012, IEEE Electron Device Letters.
[15] C. Cagli,et al. Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices , 2013, IEEE Electron Device Letters.
[16] Po-Tsun Liu,et al. Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications , 2012 .