The electrical transportation and carrier behavior of ZnSe under high pressure

With in situ electrical resistivity and Hall effect measurement, electrical transportation property and charge carrier behavior of ZnSe were investigated under high pressure using a diamond anvil cell (DAC). The electrical resistivity changed discontinuously at 7.7 and 11.9 GPa, corresponding to the phase transitions of ZnSe. In the pressure interval of 7.7–11.9 GPa, the electrical resistivity changed continuously, indicating the existence of the intermediate phase between the zinc blende and rock salt phases. The difference of carrier characteristic between the intermediate and rock salt phases can also suggest the existence of the intermediate phase. For the intermediate phase, the increase in electrical resistivity is from the decrease in mobility. While for the rock salt phase, the increase in charge carrier concentration leads to the decrease in electrical resistivity.

[1]  Xiaoyan Cui,et al.  In situ Hall effect measurement on diamond anvil cell under high pressure. , 2010, The Review of scientific instruments.

[2]  V. Muñoz,et al.  Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zinc-blende phase and the semimetallic or metallic character of the high-pressure phases , 2009, 1009.4304.

[3]  G. Zou,et al.  Thickness measurement of sample in diamond anvil cell. , 2007, The Review of scientific instruments.

[4]  Jing Liu,et al.  In situ electrical conductivity measurement of high-pressure molten (Mg0.875,Fe0.125)2SiO4 , 2007 .

[5]  G. Zou,et al.  Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement , 2005 .

[6]  A. Avdonin,et al.  Electron mobility in ZnSe single crystals , 2003 .

[7]  A. Polian,et al.  Observation of the Cinnabar Phase in ZnSe at High Pressure , 2002 .

[8]  A. Qteish,et al.  Optical Properties of High Pressure Phases in ZnTe 1− x Se x , 2002 .

[9]  A. Polian,et al.  Cinnabar phase in ZnSe at high pressure , 2001 .

[10]  Y. Vohra,et al.  Electrical and mechanical properties of C70 fullerene and graphite under high pressures studied using designer diamond anvils. , 2000, Physical review letters.

[11]  A. Qteish,et al.  Ab initio study of the phase transformations of ZnSe under high pressure: stability of the cinnabar and SC16 phases , 2000 .

[12]  D. Frost,et al.  Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS , 1999 .

[13]  A. Polian,et al.  High-pressure x-ray-absorption study of GaSe , 1999 .

[14]  I. M. Dharmadasa,et al.  Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells , 1999 .

[15]  Á. Rubio,et al.  Ab initio calculations of the pressure-induced structural phase transitionsfor four II-VI compounds , 1997 .

[16]  M. McMahon,et al.  New structural systematics in the II–VI, III–V and group IV semiconductors at high pressure , 1996 .

[17]  Steiner,et al.  Lattice dynamics and hyperfine interactions in ZnO and ZnSe at high external pressures. , 1996, Physical review. B, Condensed matter.

[18]  Tse,et al.  Theoretical study on the high-pressure phase transformation in ZnSe. , 1995, Physical review. B, Condensed matter.

[19]  R. G. Greene,et al.  High pressure X-ray and Raman study of ZnSe , 1995 .

[20]  Sterer,et al.  Pressure-induced metallization of ZnSe. , 1995, Physical review. B, Condensed matter.

[21]  R. Kolbas,et al.  ZnSe light‐emitting diodes , 1990 .

[22]  H. Kukimoto.  Conductivity control of ZnSe grown by MOVPE and its application for blue electroluminescence , 1990 .

[23]  M. Cardona,et al.  PRESSURE DEPENDENCE OF THE LOWEST DIRECT ABSORPTION EDGE OF ZnSe , 1985 .

[24]  P. Wachter,et al.  Semiconductor-Metal Transition in Intermediate-Valence Tm Compounds: Novel Features , 1984 .

[25]  A. Simashkevich,et al.  Scattering mechanisms of electrons in ZnSe crystals with high mobility , 1979 .

[26]  F. A. Kröger,et al.  High‐temperature electron mobility in ZnSe : Al and ZnSe : As , 1979 .

[27]  D. Kranzer.  Hall and drift mobility of polar p-type semiconductors. II. Application to ZnTe, CdTe, and ZnSe , 1973 .

[28]  P. Smith,et al.  The high-pressure structures of zinc sulphide and zinc selenide , 1965 .

[29]  B. Segall,et al.  Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe , 1963 .

[30]  H. G. Drickamer,et al.  Pressure induced phase transitions in some II–VI compounds , 1962 .

[31]  D. Long.  Effects of Pressure on the Electrical Properties of Semiconductors , 1956 .

[32]  E. Hall.  On a new action of the magnet on electric currents , 1879, American Journal of Science.

[33]  A M , ETHOD OF MEASURING THE RESISTIVITY AND HALL ' COEFFICIENT ON LAMELLAE OF ARBITRARY SHAPE , 2014 .