Electron‐optical‐phonon scattering rates in a rectangular semiconductor quantum wire

One‐dimensional electron‐optical‐phonon interaction Hamiltonians in a rectangular quantum wire consisting of diatomic polar semiconductors are derived under the macroscopic dielectric continuum model. The scattering rates calculated in a GaAs square quantum wire show that when the quantum wire is free‐standing in vacuum, the interaction by the surface‐optical phonon modes is very strong and may dominate over other scattering processes, especially with dimensions of about 100 A or less. When the wire is embedded in a polar semiconductor (AlAs to be specific), the scattering rates by the surface‐optical phonon modes become generally smaller, but yet comparable to those by the confined longitudinal‐optical modes as the wire dimension shrinks. A considerable decrease in the total scattering rate for optical phonons as a result of simple reduction in dimensionality is not observed in this study.

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