A wideband CMOS LNA design approach

A methodology for designing wideband CMOS LNAs is proposed. This is an extension to the existing narrowband power-constrained simultaneous noise-input matching (PCSNIM) LNA design technique. To demonstrate the application of the proposed method, two wideband single-ended cascode LNAs are designed in a 0.18 /spl mu/m CMOS technology to operate in the frequency bands of 1.5-2.5 GHz and 3.2-4.8 GHz, respectively. Based on simulation results, these LNAs achieve: maximum forward gain of 15.4 dB (17.9 dB) with 3 dB bandwidth of 1.6 GHz (2.7 GHz); maximum in-band noise figure of 0.9 dB (1.6 dB); worst case 1dB compression point of -13 dBm (-15 dBm); IIP3 of better than -2.5 dBm (-4.5 dBm) over the entire bandwidth. The LNAs draw 7.5 mA (8.8 mA) from a 1.5 V supply.

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